power transistors 1 publication date: june 2004 sjd00306bed 2sC5905 silicon npn triple diffusion mesa type horizontal deflection output for tv, crt monitor features ? high breakdown voltage: v cbo 1 700 v ? high-speed switching: t f < 200 ns ? wide safe operation area absolute maximum ratings t c = 25 c electrical characteristics t c = 25 c 3 c unit: mm note) measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. parameter symbol conditions min typ max unit collector-base cutoff current (emitter open) i cbo v cb = 1 000 v, i e = 050 a v cb = 1 700 v, i e = 01ma emitter-base cutoff current (collector open) i ebo v eb = 7 v, i c = 050 a forward current transfer ratio h fe v ce = 5 v, i c = 10 a 5 12 ? collector-emitter saturation voltage v ce(sat) i c = 10 a, i b = 2.5 a 3 v base-emitter saturation voltage v be(sat) i c = 10 a, i b = 2.5 a 1.5 v transition frequency f t v ce = 10 v, i c = 0.1 a, f = 0.5 mhz 3 mhz storage time t stg i c = 10 a, resistance loaded 3.0 s fall time t f i b1 = 2.5 a, i b2 = ? 5.0 a 0.2 s parameter symbol rating unit collector-base voltage (emitter open) v cbo 1 700 v collector-emitter voltage (e-b short) v ces 1 700 v collector-emitter voltage (base open) v ceo 600 v emitter-base voltage (collector open) v ebo 7v base current i b 8a collector current i c 20 a peak collector current * i cp 30 a collector power dissipation p c 70 w t a = 25 c 3.5 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c 15.5 0.5 3.0 0.3 (4.0) 2.0 0.2 1.1 0.1 5.45 0.3 0.7 0.1 5? 5? 5? 5? 5? 10.9 0.5 1 5? 23 (10.0) (1.2) (2.0) solder dip 3.3 0.3 5.5 0.3 (2.0) 26.5 0.5 (23.4) 22.0 0.5 18.6 0.5 (2.0) 3.2 0.1 (4.5) note) * : non-repetitive peak collector current 1: base 2: collector 3: emitter eiaj: sc-94 top-3e-a1 package internal connection b c e .com .com .com .com 4 .com u datasheet
2sC5905 2 sjd00306bed p c ? t a i c ? v ce i c ? v be v ce(sat) ? i c h fe ? v ce t f ? i b(end) t stg ? i b(end) area of safe operation area of safe operation (horizontal operation) 3 2 1 0 0 50 100 150 ambient temperature t a ( c ) collector power dissipation p c ( w ) without heat sink 0 2 4 6 8 10 0246810 1.6 a 1.4 a 1.2 a 1.0 a 0.8 a 0.6 a 0.4 a 0.2 a i b = 0 a collector current i c ( a ) collector-emitter voltage v ce ( v ) collector current i c ( a ) base-emitter voltage v be ( v ) 0 4 8 12 0 0.4 0.8 1.2 t a = 120 c ? 40 c 25 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( a ) 10 ? 2 10 ? 1 1 10 10 ? 1 110 2 10 t a = 120 c ? 40 c 25 c 1 10 10 2 10 ? 2 10 ? 1 11010 2 t a = 120 c ? 40 c 25 c forward current transfer ratio h fe collector-emitter voltage v ce ( v ) fall time t f ( ns ) base current i b(end) ( a ) 0 200 400 600 800 1 000 0.4 0.8 1.2 1.6 f h = 32 khz i c = 10 a l load 0 0.4 0.8 1.2 1.6 2.0 0.4 0.8 1.2 1.6 storage time t stg ( s ) base current i b(end) ( a ) f h = 32 khz i c = 10 a l load collector current i c ( a ) collector-emitter voltage v ce ( v ) 10 ? 1 10 ? 2 10 ? 3 10 1 10 2 11010 2 10 3 i cp = 30 a i c = 20 a dc operation t = 100 s 1 ms 10 ms t c = 25 c single pulse p c = 70 w 30 20 10 0 01 000 500 1 500 2 000 collector current i c ( a ) collector-emitter voltage v ce ( v ) < 1 ma f h = 32 khz, t c < 90 c aso for a single pulse load caused by eht flashover during horizontal operation. .com .com .com .com .com 4 .com u datasheet
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